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1700V 600A IGBT Half Bridge Module-Solid Power-DS-SPS600B17D3-S0405G0051 V-1.0

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1700V 600A IGBT Half Bridge Module-Solid Power-DS-SPS600B17D3-S0405G0051 V-1.0

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Brand Name :SPS
Model Number :SPS600B17D3
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Solid Power-DS-SPS600B17D3-S0405G0051 V-1.0

1700V 600A IGBT Half Bridge Module

1700V 600A IGBT Half Bridge Module-Solid Power-DS-SPS600B17D3-S0405G0051  V-1.0

Features:
 1700V Trench+ Field Stop technology
 Freewheeling diodes with fast and soft reverse recovery
 VCE(sat) with positive temperature coefficient
 Low switching losses
 Short circuit ruggedness
Typical Applications:
 Motor drives
 Servo drives
 UPS systems
 Solar/Energy storage converters
 Wind turbines

IGBT, Inverter / IGBT,逆变器

Maximum Rated Values / 最大额定

Item

Symbol

Conditions

Value

Units

集电极-发射极电压

Collector-emitter voltage

VCES

Tvj=25°C

1700

V

连续集电极直流电流

Continuous DC collector current

IC nom

TC=100°C, Tvjmax=175°C

600

A

集电极重复峰值电流

Peak repetitive collector current

ICRM

tp=1ms

1200

A

栅极-发射极峰值电压

Maximum gate-emitter voltage

VGES

±20

V

Characteristic Values / 特征值

Item

Symbol

Conditions

Min. Typ. Max.

Units

集电极-发射极饱和电压

Collector-emitter saturation voltage

VCE(sat)

IC=600A,VGE=15V

Tvj=25°C Tvj=125°C Tvj=150°C

1.60

1.85 1.90

1.90

V

V

V

栅极阈值电压

Gate threshold voltage

VGE(th)

IC=18mA, VCE=VGE, Tvj=25°C

5.0 5.8 6.5

V

栅极电荷

Gate charge

QG

VGE=-15V…+15V

4.66

uC

内部栅极电阻

Internal gate resistor

RGint

Tvj=25°C

1.7

输入电容

Input capacitance

Cies

f=1MHz, Tvj=25°C, VCE=25V, VGE=0V

49.5

nF

反向传输电容

Reverse transfer capacitance

Cres

f=1MHz, Tvj=25°C, VCE=10V, VGE=0V

0.75

nF

集电极-发射极截止电流

Collector-emitter cut-off current

ICES

VCE=1700V, VGE=0V, Tvj=25°C

3.00

mA

栅极-发射极漏电流

Gate-emitter leakage current

IGES

VCE=0V, VGE=20V, Tvj=25°C

600

nA

开通延迟时间(电感负载)

Turn-on delay time, inductive load

td( on)

IC=600A, VCE=900V

VGE=±15V

RGon=1Ω

RGoff=1Ω

Inductive Load,

Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C

145

170

175

ns

ns

ns

上升时间(电感负载)

Rise time, inductive load

tr

90

105

110

ns

ns

ns

关断延迟时间(电感负载)

Turn-off delay time, inductive load

td(off)

590

700

720

ns

ns

ns

下降时间(电感负载)

Fall time, inductive load

tf

370

600

650

ns

ns

ns

开通损耗能量(每脉冲)

Turn-on energy loss per pulse

Eon

79.6

135.1

153.6

mJ

mJ

mJ

关断损耗能量(每脉冲)

Turn-off energy loss per pulse

Eoff

144.3

201.7

212.5

mJ

mJ

mJ

短路数据

SC data

ISC

VGE≤15V, VCC=1000V

VCEmax=VCES-LsCE·di/dt, tp=10µs, Tvj=150°C

1900

A

结-外壳热阻

Thermal resistance, junction to case

RthJC

Per IGBT / 每个 IGBT

0.05

K/W

工作温度

Temperature under switching conditions

Tvjop

-40 150

°C

Diode, Inverter / 二极管,逆变器

Maximum Rated Values /最大额定值

Item

Symbol

Conditions

Value

Units

反向重复峰值电压

Peak repetitive reverse voltage

VRRM

Tvj=25°C

1700

V

连续正向直流电流

Continuous DC forward current

IF

600

A

正向重复峰值电流

Peak repetitive forward current

IFRM

tp=1ms

1200

A

Characteristic Values / 特征值

Item

Symbol

Conditions

Min. Typ. Max.

Units

正向电压

Forward voltage

VF

IF=600A

Tvj=25°C

Tvj=125°C

Tvj=150°C

2.20

2.40 2.40

2.50

V

V

V

反向恢复峰值电流

Peak reverse recovery current

IRM

IF=600A

-diF/dtoff=7000A/µs

VR =900 V

VGE=-15V

Tvj=25°C 800

Tvj=125°C 920

Tvj=150°C 950

A

A

A

恢复电荷

Recovery charge

Qr

Tvj=25°C 153

Tvj=125°C 237

Tvj=150°C 260

uC

uC

uC

反向恢复损耗(每脉冲)

Reverse recovery energy (per pulse)

Erec

Tvj=25°C

Tvj=125°C

Tvj=150°C

79.5

153.3

166.7

mJ

mJ

mJ

结-外壳热阻

Thermal resistance, junction to case

RthJC

Per diode / 每个二极管

0.09

K/W

工作温度

Temperature under switching conditions

Tvjop

-40 150

°C

NTC-Thermistor / 负温度系数热敏电阻

Characteristic Values /特征值

Item

Symbol

Conditions

Value

Units

额定电阻值

Rated resistance

R25

TC=25°C

5.00

kΩ

B-

B-value

B25/50

3375

K

Module / 模块

Item

Symbol

Conditions

Value

Units

绝缘测试电压

Isolation test voltage

VISOL

RMS, f=50Hz, t=1min

3.4

kV

模块基板材料

Material of module baseplate

Cu

内部绝缘

Internal isolation

基本绝缘 (class 1, IEC 61140)

Basic insulation (class 1, IEC 61140)

Al2O3

爬电距离

Creepage distance

端子-散热片 / terminal to heatsink

端子-端子/terminal to terminal

14.5

13.0

mm

电气间隙

Clearance

端子-散热片 / terminal to heatsink

端子-端子/terminal to terminal

12.5

10.0

mm

相对电痕指数

Comparative tracking index

CTI

> 200

Item

Symbol

Conditions

Min.

Typ.

Max.

Units

杂散电感,模块

Stray inductance module

LsCE

20

nH

模块引线电阻,端子-芯片

Module lead resistance, terminals - chip

RCC’+EE’

TC=25°C

1.10

mΩ

储存温度

Storage temperature

Tstg

-40

125

°C

模块安装的安装扭矩

Mounting torque for module mounting

M5

3.00

6.00

Nm

端子联接扭矩

Terminal connection torque

M6

3.00

6.00

Nm

重量

Weight

G

345

g

1700V 600A IGBT Half Bridge Module-Solid Power-DS-SPS600B17D3-S0405G0051  V-1.0

1700V 600A IGBT Half Bridge Module-Solid Power-DS-SPS600B17D3-S0405G0051  V-1.0

1700V 600A IGBT Half Bridge Module-Solid Power-DS-SPS600B17D3-S0405G0051  V-1.0

1700V 600A IGBT Half Bridge Module-Solid Power-DS-SPS600B17D3-S0405G0051  V-1.0

1700V 600A IGBT Half Bridge Module-Solid Power-DS-SPS600B17D3-S0405G0051  V-1.0

1700V 600A IGBT Half Bridge Module-Solid Power-DS-SPS600B17D3-S0405G0051  V-1.0

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