Jiangsu Solid Power Semiconductor Co.,Ltd
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Solid Power-DS-SPS03NM15E3-S03050001 V1.0
1500V 3A N-Channel MOS Discrete
1500V 3A MOSFET
Features:
Typical Applications:
MOSFET MOSFET
Output characteristic MOSFET Transfer characteristic MOSFET
IDS=f(VDS) , Tvj=25°C IDS=f(VGS) , VDS=20V , Tvj=25℃
Normalized Drain-source on resistance Normalized Drain-source on resistance
RDSon(P.U.)=f(Tvj) RDSon=f(IDS) Tvj=25℃
IDS=1.3A VGS=10V VGS=10V
MOSFET
Forward characteristic of Diode Gate charge characteristic MOSFET
IDS=f(VDS) VGS=f(QG)
VDS=750V, IDS=3A, Tvj=25°C
MOSFET
Capacity characteristic MOSFET Maximum Power Dissipation
C=f(VDS) PD=f(TC)
VGS=0V, Tvj=25°C , f=1MHz
Maximum Drain Current Forward Biased Safe Operating Area(FBSOA)
ID=f(TC)
MOSFET
Transient thermal impedance MOSFET
ZthJC=f (t)
This is a discrete N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with a voltage rating of 1500V and a current rating of 3A. N-Channel MOSFETs are commonly used semiconductor devices in various electronic applications, including power supplies, amplifiers, and switch circuits. The 1500V indicates the maximum voltage the device can handle, while the 3A represents the maximum current it can accommodate. In specific applications, proper drive circuitry and heat dissipation should be considered to ensure the reliability and performance of the MOSFET.
Package outlines