Jiangsu Solid Power Semiconductor Co.,Ltd
Survive by quality, develop by innovation
Add to Cart
Solid Power-DS-SPS12MA12E4S
1200V 12mΩ SiC MOSFET
Features:
□ High blocking voltage with low On-resistance
□ High speed switching with low capacitances
□ Fast intrinsic diode with low reverse recovery (Qrr)
Typical Applications:
□ PV Inverters
□ Charging Piles
□ Energy storage systems
□ Industrial power supply
□ Industrial Motors
Maximum Ratings @Tc=25°C (unless otherwise specified)
| Item | Symbol | Conditions | Values | Unit |
| Drain-Source Voltage | VDSmax | VGS=0V, ID=100μA | 1200 | V |
| Gate-Source Voltage | VGSop | Static | -5/+20 | V |
| Maximum Gate-Source Voltage | VGSmax | Static | -8/+22 | V |
| Continuous Drain Current | ID | VGS=20V, Tc=25°C | 214 |
A |
| VGS=20V, Tc=100°C | 151 | |||
| Pulsed Drain Current | ID(pulse) | Pulse width tp limited by Tjmax | 400 | A |
| Power Dissipation | PD | TC=25°C, Tj=175°C | 938 | W |
| Operating Junction Range | Tj | -55 to +175 | °C | |
| Storage Temperature Range | Tstg | -55 to +175 | °C |
Electrical Characteristics @Tc=25°C (unless otherwise specified)
| Item | Symbol | Conditions | Values min. typ. max. | Unit | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=100μA | 1200 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=40mA | 2.0 | 2.7 | 3.5 | V |
| VDS=VGS , ID=40mA, Tj=175°C | - | 1.9 | - | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=1200V, VGS=0V | - | 2 | 100 | μA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | 10 | 100 | nA |
| Drain-Source On-State Resistance | RDS(on) | VGS=20V, ID=100A | - | 12 | 20 |
mΩ |
| VGS=20V, ID=100A, Tj=175°C | - | 20 | - | |||
| VGS=18V, ID=100A | - | 13 | 25 | |||
| VGS=18V, ID=100A, Tj=175°C | - | 21 | - | |||
| Transconductance | gfs | VDS=20V, IDS=100A | - | 60 | - | S |
| VDS=20V, IDS=100A, Tj=175°C | - | 52 | - | |||
|
Turn-On Switching Energy (Body Diode FWD) | Eon | VDS=800V,VGS=-5V/20V, ID=100A, RG(ext)=5Ω, L=100μH, Tj=25°C FWD=SPS12MA12E4S |
- |
5.2 |
- |
mJ |
| Turn-Off Switching Energy (Body Diode FWD) | Eoff | - | 3.7 | - | ||
| Turn-On Delay Time | td(on) |
VDD=800V, VGS=-5V/20V, ID=100A,RG(ext)=5Ω, L=100μH |
- |
24 |
- |
ns |
| Rise Time | tr | - | 149 | - | ||
| Turn-Off Delay Time | td(off) | - | 145 | - | ||
| Fall Time | tf | - | 49 | - | ||
| Gate to Source Charge | Qgs | VDS=800V, VGS=-5V/20V, ID=100A |
- |
215 |
- |
nC |
| Gate to Drain Charge | Qgd | - | 179 | - | ||
| Total Gate Charge | Qg | - | 577 | - | ||
| Input Capacitance | Ciss | VGS=0V, VDS=1000V f=1MHz VAC=25mV | - | 8330 | - |
pF |
| Output Capacitance | Coss | - | 343 | - | ||
| Reverse Transfer Capacitance | Crss | - | 57 | - | ||
| COSS Stored Energy | Eoss | - | 217 | - | μJ | |
| Internal Gate Resistance |
RG(int) | f=1MHz, VAC=25mV | - | 0.8 | - | Ω |
Reverse Diode Characteristics @Tc=25°C (unless otherwise specified)
| Item Symbol | Conditions | Values Unit min. typ. max. | ||||
| Diode Forward Voltage | VSD | VGS=-5V, ISD=50A | - | 4.7 | 7 | V |
| VGS=-5V, ISD=50A, Tj=175°C | - | 3.8 | - | V | ||
| Continuous Diode Forward Current | IS | VGS=-5V | - | 214 | - | A |
| Reverse Recovery Time | trr | VGS=-5V, | - | 46 | - | ns |
| Reverse Recovery Charge | Qrr | ISD=100A, | - | 1 | - | nC |
| Peak Reverse Recovery Current | Irrm | VR=800V, di/dt=1597A/μs | - | 37 | - | A |
Reverse Diode Characteristics @Tc=25°C (unless otherwise specified)
| Item Symbol | Conditions | Values Unit | ||||
| Thermal Resistance from Junction to Case | RθJC | - | 0.16 | - | ℃/W | |
| Thermal Resistance From Junction to Ambient | RθJA | - | 32 | - | ℃/W | |
Typical Performance
Typical Performance
Typical Performance
Typical Performance
Typical Performance
This is a 1200V Silicon Carbide (SiC) MOSFET with an on-state resistance of 12 milliohms (12mΩ). SiC MOSFETs are known for their high voltage capability and low on-state resistance, making them suitable for efficient power electronic applications like high-frequency converters and electric vehicles.
Package Outline: TO-247-4L