Jiangsu Solid Power Semiconductor Co.,Ltd
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Solid Power-DS-SPS820F08HDM4-S04090002
750V 820A IGBT Full Bridge Module
750V 820A IGBT
Features:
□ 750V Trench+ Field Stop technology
□ Freewheeling diodes with fast and soft reverse recovery
□ VCE(sat) with positive temperature coefficient
□ Low switching losses
□ Short circuit ruggedness
Typical Applications:
□ Motor drives
□ Hybrid electrical vehicles
□ Automotive applications
□ Commercial agriculture vehicles
Package
| Item | Symbol | Conditions | Values | Unit | |||
| Isolation test voltage | VISOL | RMS, f = 0 Hz, t =1 s | 4.2 |
kV | |||
| Material of module baseplate | Cu | ||||||
| Internal isolation | (class 1, IEC 61140) Basic insulation (class 1, IEC 61140) | Al2O3 | |||||
| Creepage distance | dCreep | terminal to heatsink | 9.0 |
mm | |||
| dCreep | terminal to terminal | 9.0 | |||||
| Clearance | dClear | terminal to heatsink | 4.5 |
mm | |||
| dClear | terminal to terminal | 4.5 | |||||
| Comparative tracking index | CTI | ＞200 | |||||
| Item | Symbol | Conditions | Values | Unit | |||
| Min. | Typ. | Max. | |||||
| Stray inductance module | LsCE | 10 | nH | ||||
| Module lead resistance, terminals - chip | RCC’+EE’ | TC=25℃ | 0.75 | mΩ | |||
| Storage temperature | Tstg | -40 | 125 | ℃ | |||
| Mounting torque for module mounting | M4 | baseplate to heatsink | 1.8 | 2.2 | Nm | ||
| M3 | PCB to frame | 0.45 | 0.55 | Nm | |||
| Weight | G | 725 |
g | ||||
IGBT
Maximum Rated Values
| Item | Symbol | Conditions | Values | Unit | |
| Collector-emitter Voltage | VCES | Tvj=25℃ | 750 |
V | |
| Maximum gate-emitter voltage | VGES | ±20 |
V | ||
| Transient gate-emitter voltage | VGES | tp≤10μs,D=0.01 | ±30 |
V | |
| Implemented collector current | ICN | 820 |
A | ||
| Continuous DC collector current | IC | TF = 80°C, Tvjmax = 175°C | 450 |
A | |
| Pulsed collector current,tp limited by Tjmax | ICpulse | 1640 |
A | ||
| Power dissipation | Ptot | TF=75℃ | 769 |
W | |
| Item | Symbol | Conditions | Values | Unit | |||
| Min. | Typ. | Max. | |||||
| Collector-emitter saturation voltage | VCE(sat) | IC=450A, VGE=15V | Tvj=25℃ | 1.20 | 1.40 |
V | |
| Tvj=125℃ | 1.24 | ||||||
| Tvj=150℃ | 1.27 | ||||||
| IC=820A, VGE=15V | Tvj=25℃ | 1.40 | 1.60 | ||||
| Tvj=125℃ | 1.55 | ||||||
| Tvj=150℃ | 1.60 | ||||||
| Gate threshold voltage | VGE(th) | VCE=VGE, IC=9.6mA | 5.1 | 5.8 | 6.5 |
V | |
| Collector-emitter cut-off current | ICES | VCE=750V, VGE=0V | Tvj=25℃ | 100 | µA | ||
| Tvj=150℃ | 5 | mA | |||||
| Gate-emitter leakage current | IGES | VCE=0V,VGE=±20V, Tvj=25℃ | -200 | 200 |
nA | ||
| Gate Charge | QG | VCE=400V, IC=450A , VGE=-8/+15V | 1.6 |
μC | |||
| Internal gate resistor | RGint | 0.8 |
Ω | ||||
| Input Capacitance | Cies | VCE=25V, VGE=0V, f =100kHz | 42.4 |
nF | |||
| Output Capacitance | Coes | 3.1 | |||||
| Reverse Transfer Capacitance | Cres | 0.8 | |||||
| Turn-on delay time,inductive load | td(on) | VCC=400V,IC=450A RGon=2.5Ω, VGE=-8/+15V | Tvj=25℃ | 90 | ns | ||
| Tvj=125℃ | 92 | ns | |||||
| Tvj=150℃ | 96 | ns | |||||
| Rise Time,inductive load | tr | Tvj=25℃ | 64 | ns | |||
| Tvj=125℃ | 68 | ns | |||||
| Tvj=150℃ | 70 | ns | |||||
| Turn-off delay time,inductive load | td(off) | VCC=400V,IC=450A RGoff=5.1Ω, VGE=-8/+15V | Tvj=25℃ | 520 | ns | ||
| Tvj=125℃ | 580 | ns | |||||
| Tvj=150℃ | 590 | ns | |||||
| Fall time,inductive load | tf | Tvj=25℃ | 200 | ns | |||
| Tvj=125℃ | 310 | ns | |||||
| Tvj=150℃ | 320 | ns | |||||
| Turn-on energy loss per pulse | Eon | VCC=400V,IC=450A RG=2.5Ω,RGoff=5.1Ω VGE=-8/+15V | Tvj=25℃ | 15.0 | mJ | ||
| Tvj=125℃ | 18.0 | mJ | |||||
| Tvj=150℃ | 20.0 | mJ | |||||
| Turn off Energy loss per pulse | Eoff | Tvj=25℃ | 33.5 | mJ | |||
| Tvj=125℃ | 41.0 | mJ | |||||
| Tvj=150℃ | 43.0 | mJ | |||||
| Item | Symbol | Conditions | Values | Unit | |||
| Min. | Typ. | Max. | |||||
| SC data | ISC | VGE≤15V, VCC=400V | tp≤3µs Tvj=150℃ | 5400 |
A | ||
| IGBT thermal resistance,junction-cooling fluid | RthJF | 0.13 |
K /W | ||||
| Operating Temperature | TJop | -40 | 175 |
℃ | |||
Diode
Maximum Rated Values
| Item | Symbol | Conditions | Values | Unit | |
| Repetitive reverse voltage | VRRM | Tvj=25℃ | 750 |
V | |
| Implemented forward current | ICN | 820 |
A | ||
| Continuous DC forward current | IF | TF = 80°C, Tvjmax = 175°C | 450 |
A | |
| Diode pulsed current,tp limited by TJmax | IFpulse | 1640 | |||
Characteristic Values
| Item | Symbol | Conditions | Values | Unit | |||
| Min. | Typ. | Max. | |||||
|
Forward voltage | VF | IF=450A , VGE=0V | Tvj=25℃ | 1.20 | 1.60 |
V | |
| Tvj=125℃ | 1.16 | ||||||
| Tvj=150℃ | 1.14 | ||||||
| IF=820A , VGE=0V | Tvj=25℃ | 1.42 | 1.80 | ||||
| Tvj=125℃ | 1.43 | ||||||
| Tvj=150℃ | 1.44 | ||||||
|
Reverse recovery time | trr | IF=450A dIF/dt=-6700A/μs (Tvj=150°C) VR=400V, VGE=-8V | Tvj=25℃ | 122 |
ns | ||
| Tvj=125℃ | 160 | ||||||
| Tvj=150℃ | 172 | ||||||
|
Peak reverse recovery current | IRRM | Tvj=25℃ | 295 |
A | |||
| Tvj=125℃ | 360 | ||||||
| Tvj=150℃ | 375 | ||||||
|
Reverse recovery charge | QRR | Tvj=25℃ | 28.5 |
µC | |||
| Tvj=125℃ | 40.5 | ||||||
| Tvj=150℃ | 43.5 | ||||||
|
Reverse recovery energy loss per pulse | Erec | Tvj=25℃ | 6.2 |
mJ | |||
| Tvj=125℃ | 11.7 | ||||||
| Tvj=150℃ | 13.2 | ||||||
|
Diode thermal resistance,junction-cooling fluid | RthJFD | 0.25 |
K /W | ||||
|
Operating Temperature | TJop | -40 | 175 |
℃ | |||
NTC-Thermistor
Characteristic Values
| Item | Symbol | Conditions | Values | Unit | |
|
Rated resistance | R25 | TC=25℃ | 5.00 |
kΩ | |
|
B-value | R25/50 | 3375 |
K | ||
Output characteristic(typical) Output characteristic(typical)
IC = f (VCE) Tvj= 150°C
IGBT
Transfer characteristic(typical) Switching losses IGBT (typical)
IC = f (VGE) VCE = 20V E = f (RG)
VGE = -8/+15V, IC = 450A, VCE = 400V
IGBT (RBSOA)
Switching losses IGBT (typical) Reverse bias safe operating area(RBSOA)
E = f (IC) IC =f (VCE)
VGE = -8/+15V, RGon = 2.5Ω ,RGoff = 5.1Ω , VCE = 400V VGE = -8/+15V, Rgoff = 5.1Ω, Tvj = 150°C
Typical capacitance as a function of collector-emitter voltage Gate charge (typical)
C = f (VCE) VGE = f (QG)
f = 100 kHz, VGE = 0V IC = 450A, VCE = 400V
IGBT
IGBT transient thermal impedance Forward characteristic of Diode (typical)
Zth(j-c) = f (t) IF = f (VF)
Switching losses Diode(typical) Switching losses Diode(typical)
Erec = f (RG) Erec = f (IF)
IF = 450A, VCE = 400V RG = 2.5Ω, VCE = 400V
Diode transient thermal impedance NTC-Thermistor-temperature characteristic (typical)
Zth(j-c) = f (t) R = f (T)
An IGBT module in an inverter is a compact assembly containing Insulated Gate Bipolar Transistors (IGBTs) and other components. IGBTs play a crucial role in switching and converting direct current (DC) to alternating current (AC) in devices like motor drives, solar inverters, and uninterruptible power supplies. The module simplifies integration, and proper cooling is essential for efficiency and reliability.
Circuit diagram headline
Package outlines
Dimensions in (mm)
mm