Jiangsu Solid Power Semiconductor Co.,Ltd
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Solid Power-DS-SPS120MB12G6S-S04310003
1200V 120A SiC MOSFET Half Bridge Module
Features:
Typical Applications:
|
MOSFET
Maximum Rated Values / 最大额定值 | |||||||
|
Item |
Symbol |
Conditions |
Value |
Units | |||
|
漏极－源极电压 Drain-source voltage |
VDSS |
Tvj=25°C |
1200 |
V | |||
|
连续漏极直流电流 Continuous DC drain current |
ID |
VGS=20V, TC=25°C, Tvjmax=175°C VGS=20V, TC=85°C, Tvjmax=175°C |
180
120 |
A | |||
|
脉冲漏极电流 Pulsed drain current |
ID pulse |
Pulse width tp limited by Tvjmax |
480 |
A | |||
|
总功率损耗 Total power dissipation |
Ptot |
TC=25°C, Tvjmax=175°C |
576 |
W | |||
|
栅极峰值电压 Maximum gate-source voltage |
VGSS |
-10/25 |
V | ||||
|
Characteristic Values / 特征值 | |||||||
|
Item |
Symbol |
Conditions |
Min. Typ. Max. |
Units | |||
|
漏极－源极通态电阻 Drain-source on resistance |
RDS( on) |
ID=120A,VGS=20V |
Tvj=25°C Tvj=125°C Tvj=150°C |
13.0 16.0 18.0 |
16.0 |
mΩ mΩ mΩ | |
|
栅极阈值电压 Gate threshold voltage |
VGS(th) |
IC=30mA, VCE=VGE, Tvj=25°C IC=30mA, VCE=VGE, Tvj=150°C |
2.0 |
2.4 1.7 |
4.0 |
V | |
|
跨导
Transconductance |
gfs |
VDS = 20 V, IDS = 120 A, Tvj=25°C VDS = 20 V, IDS = 120 A, Tvj=150°C |
68.9 61.8 |
S | |||
|
栅极电荷 Gate charge |
QG |
VGE=-5V…+20V |
474 |
nC | |||
|
内部栅极电阻 Internal gate resistor |
RGint |
Tvj=25°C |
2.2 |
Ω | |||
|
输入电容 Input capacitance |
Cies |
f=1MHz,Tvj=25°C,VDS=1000V, VAC=25mV, VGE=0V |
8850 |
pF | |||
|
输出电容 Output capacitance |
Coes |
f=1MHz,Tvj=25°C,VDS=1000V, VAC=25mV, VGE=0V |
564 |
pF | |||
|
反向传输电容 Reverse transfer capacitance |
Cres |
f=1MHz,Tvj=25°C,VDS=1000V, VAC=25mV, VGE=0V |
66 |
pF | |||
|
零栅电压漏极电流 Zero gate voltage drain current |
IDSS |
VDS=1200V, VGS=0V, Tvj=25°C |
300 |
μA | |||
|
栅极-源极漏电流 Gate-source leakage current |
IGSS |
VDS=0V, VGS=20V, Tvj=25°C |
100 |
nA | |||
|
开通延迟时间(电感负载) Turn-on delay time, inductive load |
td( on) |
Tvj=25°C Tvj=125°C Tvj=150°C |
10 8
8 |
ns ns ns | |||
|
上升时间(电感负载) Rise time, inductive load |
tr |
Tvj=25°C Tvj=125°C Tvj=150°C |
36 34
34 |
ns ns ns | |||
|
关断延迟时间(电感负载) Turn-off delay time, inductive load |
td(off) |
ID=120A, VDS=600V VGS=-5/20V RGon=3.3Ω |
Tvj=25°C Tvj=125°C Tvj=150°C |
128 140
140 |
ns ns ns | ||
|
下降时间(电感负载) Fall time, inductive load |
tf |
RGoff=3.3Ω Lσ = 56 nH
Inductive Load, |
Tvj=25°C Tvj=125°C Tvj=150°C |
62 62
62 |
ns ns ns | ||
|
开通损耗能量(每脉冲) Turn-on energy loss per pulse |
Eon |
Tvj=25°C Tvj=125°C Tvj=150°C |
2.35 2.15 2.15 |
mJ mJ | |||
|
关断损耗能量(每脉冲) Turn-off energy loss per pulse |
Eoff |
Tvj=25°C Tvj=125°C Tvj=150°C |
1.65 1.80 1.80 |
mJ mJ | |||
|
结－外壳热阻 Thermal resistance, junction to case |
RthJC |
Per MOSFET / 每个 MOSFET |
0.23 |
K/W | ||
|
工作温度 Temperature under switching conditions |
Tvjop |
-40 150 |
°C | |||
|
Diode /二极管
Maximum Rated Values /最大额定值 | ||||||
|
Item |
Symbol |
Conditions |
Value |
Units | ||
|
连续正向直流电流 Continuous diode forward current |
IF |
VGS = -5 V, TC = 25 ˚C |
177 |
A | ||
|
Characteristic Values / 特征值 | ||||||
|
Item |
Symbol |
Conditions |
Min. Typ. Max. |
Units | ||
|
正向电压 Forward voltage |
VSD |
IF=120A, VGS=0V |
Tvj=25°C Tvj=150°C |
1.45 1.90 |
1.80 |
V V |
|
结－外壳热阻 Thermal resistance, junction to case |
RthJC |
Per diode / 每个二极管 |
0.30 |
K/W | ||
|
工作温度 Temperature under switching conditions |
Tvjop |
-40 150 |
°C | |||
|
Module / 模块 | ||||
|
Item |
Symbol |
Conditions |
Value |
Units |
|
绝缘测试电压 Isolation test voltage |
VISOL |
RMS, f=50Hz, t=1min |
2.5 |
kV |
|
模块基板材料 Material of module baseplate |
Cu | |||
|
内部绝缘 Internal isolation |
基本绝缘 (class 1, IEC 61140) Basic insulation (class 1, IEC 61140) |
Al2O3 | ||
|
爬电距离 Creepage distance |
端子-散热片 / terminal to heatsink 端子-端子/terminal to terminal |
29.0 23.0 |
mm | |
|
电气间隙 Clearance |
端子-散热片 / terminal to heatsink 端子-端子/terminal to terminal |
23.0 11.0 |
mm | |
|
相对电痕指数 Comparative tracking index |
CTI |
> 400 | ||
|
Item |
Symbol |
Conditions |
Min. |
Typ. |
Max. |
Units |
|
杂散电感,模块 Stray inductance module |
LsCE |
20 |
nH | |||
|
模块引线电阻,端子-芯片 Module lead resistance, terminals - chip |
RCC’+EE’ |
TC=25°C |
0.465 |
mΩ | ||
|
储存温度
Storage temperature |
Tstg |
-40 |
125 |
°C | ||
|
模块安装的安装扭矩 Mounting torque for module mounting |
M5 |
2.50 |
5.00 |
Nm | ||
|
端子联接扭矩 Terminal connection torque |
M6 |
3.00 |
5.00 |
Nm | ||
|
重量
Weight |
G |
300 |
g |
MOSFET MOSFET
Output characteristic MOSFET (typical) Output characteristic MOSFET (typical)
IC=f (VCE) IC=f(VCE)
Tvj=25°C Tvj=150°C
Normalized Drain-source on resistance (typical) Normalized Drain-source on resistance (typical)
RDSon(P.U.)=f(Tvj) RDSon=f(IDS)
IDS=120A VGS=20V VGS=20V
Drain-source on resistance (typical) Threshold Voltage (typical)
RDSon=f(Tvj) VDS(th)=f(Tvj)
IDS=120A VDS=VGS, IDS=30mA
MOSFET
Transfer characteristic MOSFET (typical) Forward characteristic of Diode (typical)
IDS=f(VGS) IDS=f(VDS)
VDS=20V Tvj=25°C
Forward characteristic of Diode (typical) characteristic of 3rd Quadrant (typical)
IDS=f(VDS) IDS=f(VDS)
Tvj=150°C Tvj=25°C
characteristic of 3rd Quadrant (typical) Gate charge characteristic MOSFET (typical)
IDS=f(VDS) VGS=f(QG)
Tvj=150°C VDS=800V, IDS=120A, Tvj=25°C
MOSFET
Capacity characteristic MOSFET(typical) Switching losses MOSFET (typical)
C=f(VDS) E=f(IC)
VGS=0V, Tvj=25°C , f=1MHz VGE=-5/20V, RG=3.3 Ω, VCE=600V
MOSFET MOSFET
Switching losses MOSFET (typical) Transient thermal impedance MOSFET
E=f (RG) ZthJC=f (t)
VGE=-5/20V, IC=120A, VCE=600V
Transient thermal impedance Diode
ZthJC=f (t)
The "1200V 120A SiC MOSFET Half Bridge Module" integrates two Silicon Carbide MOSFETs in a half-bridge configuration. Designed for high-power applications, it provides precise control over voltage (1200V) and current (120A). Effective cooling is crucial for reliable operation, and detailed specifications can be found in the manufacturer's datasheet.
Circuit diagram headline
Package outlines