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Jiangsu Solid Power Semiconductor Co.,Ltd

City:wuxi

Province/State:jiangsu

Country/Region:china

Contact Person:MrZhou

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OEM IGBT Power Module 1200V 300A Half Bridge Module DS-SPS300B12G6M4-S04020025

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Model Number :SPS300B12G6M4

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Solid Power-DS-SPS300B12G6M4-S04020025

1200V 300A IGBT Half Bridge Module

Features:

□ 1200V Trench+ Field Stop technology

□ Freewheeling diodes with fast and soft reverse recovery

□ V_CE(sat) with positive temperature coefficient

□ Low switching losses

Typical Applications:

□ Inductive heating

□ Welding

□ High frequency switching application

Package

Item	Symbol	Conditions		Values			Unit
Isolation test voltage	VISOL	RMS, f = 50 Hz, t =1 min		4.0			kV
Material of module baseplate				Cu
Internal isolation		(class 1, IEC 61140) Basic insulation (class 1, IEC 61140)		Al₂O₃
Creepage distance	dCreep	terminal to heatsink		29.0			mm
	dCreep	terminal to terminal		23.0
Clearance	dClear	terminal to heatsink		23.0			mm
	dClear	terminal to terminal		11.0
Comparative tracking index	CTI			＞400

Item	Symbol	Conditions		Values			Unit
				Min.	Typ.	Max.
Stray inductance module	LsCE				20		nH
Module lead resistance, terminals - chip	RCC’+EE’		T_C=25℃		0.70		mΩ
Storage temperature	Tstg			-40		125	℃
Mounting torque for module mounting	M6			3.0		6.0	Nm
Terminal connection torque	M6			2.5		5.0	Nm
Weight	G				320		g

IGBT

Maximum Rated Values

Item	Symbol	Conditions		Values	Unit
Collector-emitter Voltage	VCES		T_vj=25℃	1200	V
Maximum gate-emitter voltage	VGES			±20	V
Transient gate-emitter voltage	VGES	t_p≤10μs,D=0.01		±30	V
Continuous DC collector current	I_C		T_C=25℃	400	A
Continuous DC collector current	I_C		T_C=100℃	300	A
Pulsed collector current,tp limited by T_jmax	ICpulse			600	A
Power dissipation	Ptot			1500	W

Characteristic Values

Item	Symbol	Conditions		Values			Unit
Item	Symbol	Conditions		Min.	Typ.	Max.	Unit
Collector-emitter saturation voltage	VCE(sat)	I_C=300A, V_GE=15V	T_vj=25℃		1.50	1.80	V
			T_vj=125℃		1.65
			T_vj=150℃		1.70
Gate threshold voltage	VGE(th)	V_CE=V_GE, I_C=12mA		5.0	5.8	6.5	V
Collector-emitter cut-off current	ICES	V_CE=1200V, V_GE=0V	T_vj=25℃			100	µA
Collector-emitter cut-off current	ICES	V_CE=1200V, V_GE=0V	T_vj=150℃			5	mA
Gate-emitter leakage current	IGES	V_CE=0V,V_GE=±20V, T_vj=25℃		-200		200	nA
Gate Charge	Q_G	V_CE=600V, I_C=300A , V_GE=±15V			3.2		μC
Input Capacitance	Cies	V_CE=25V, V_GE=0V, f =100kHz			60.0		nF
Output Capacitance	Coes				1.89
Reverse Transfer Capacitance	Cres				0.54
Internal gate resistor	RGint	T_vj=25℃			1.2		Ω
Turn-on delay time,inductive load	td(on)	V_CC=600V,I_C=300A R_G=1.8Ω, V_GE=±15V	T_vj=25℃		130		ns
			T_vj=125℃		145		ns
			T_vj=150℃		145		ns
Rise Time,inductive load	t_r		T_vj=25℃		60		ns
			T_vj=125℃		68		ns
			T_vj=150℃		68		ns
Turn-off delay time,inductive load	td(off)	V_CC=600V,I_C=300A R_G=1.8Ω, V_GE=±15V	T_vj=25℃		504		ns
			T_vj=125℃		544		ns
			T_vj=150℃		544		ns
Fall time,inductive load	t_f		T_vj=25℃		244		ns
			T_vj=125℃		365		ns
			T_vj=150℃		370		ns
Turn-on energy loss per pulse	Eon	V_CC=600V,I_C=300A R_G=1.8Ω, V_GE=±15V	T_vj=25℃		7.4		mJ
			T_vj=125℃		11.1		mJ
			T_vj=150℃		11.6		mJ
Turn off Energy loss per pulse	Eoff		T_vj=25℃		32.0		mJ
			T_vj=125℃		39.5		mJ
			T_vj=150℃		41.2		mJ
SC data	ISC	V_GE≤15V, V_CC=600V	tp≤10µs T_vj=150℃			1350	A
IGBT thermal resistance,junction-case	RthJC					0.1	K /W
Operating Temperature	TJop			-40		150	℃

Diode

Maximum Rated Values

Item	Symbol	Conditions		Values	Unit
Repetitive reverse voltage	VRRM		T_vj=25℃	1200	V
Continuous DC forward current	I_F			300	A
Diode pulsed current,tp limited by T_Jmax	IFpulse			600	A

Characteristic Values

Item	Symbol	Conditions		Values			Unit
				Min.	Typ.	Max.
Forward voltage	V_F	I_F=300A , V_GE=0V	T_vj=25℃		2.30	2.70	V
			T_vj=125℃		2.50
			T_vj=150℃		2.50
Reverse recovery time	trr	I_F=300A dI_F/dt=-4900A/μs (T_vj=150°C) V_R=600V, V_GE=-15V	T_vj=25℃		90		ns
			T_vj=125℃		120
			T_vj=150℃		126
Peak reverse recovery current	IRRM		T_vj=25℃		212		A
			T_vj=125℃		245
			T_vj=150℃		250
Reverse recovery charge	QRR		T_vj=25℃		19		µC
			T_vj=125℃		27
			T_vj=150℃		35
Reverse recovery energy loss per pulse	Erec		T_vj=25℃		7.7		mJ
			T_vj=125℃		13.3
			T_vj=150℃		14.0
Diode thermal resistance,junction-case	RthJCD					0.23	K /W
Operating Temperature	TJop			-40		150	℃

Output characteristic(typical) Output characteristic(typical)

I_C = f (V_CE) I_C = f (V_CE)

T_vj= 150°C

IGBT

Transfer characteristic(typical) Switching losses IGBT (typical)

I_C = f (V_GE) E = f (R_G)

V_CE = 20V V_GE = ±15V, I_C = 300A, V_CE = 600V

IGBT RBSOA

Switching losses IGBT (typical) Reverse bias safe operating area(RBSOA)

E = f (I_C) I_C =f (V_CE)

V_GE = ±15V, R_G = 1.8Ω , V_CE = 600V V_GE = ±15V, R_Goff = 1.8Ω, T_vj = 150°C

Typical capacitance as a function of collector-emitter voltage Gate charge (typical)

C = f (V_CE) V_GE = f (Q_G)

f = 100 kHz, V_GE = 0V I_C = 300A, V_CE = 600V

IGBT

IGBT transient thermal impedance as a function of pulse width Forward characteristic of Diode (typical)

Zth(j-c) = f (t) I_F = f (V_F)

Switching losses Diode(typical) Switching losses Diode(typical)

E_rec = f (R_G) E_rec = f (I_F)

I_F = 300A, V_CE = 600V R_G = 1.8Ω, V_CE = 600V

Diode transient thermal impedance as a function of pulse width

Zth(j-c) = f (t)

An IGBT half-bridge module is a power electronic device that combines two Insulated Gate Bipolar Transistors (IGBTs) arranged in a half-bridge configuration. This configuration is commonly used in various applications where bidirectional control of power is required. Here are some key points about IGBT half-bridge modules:

1. IGBTs: IGBTs are semiconductor devices that combine the characteristics of both insulated gate field-effect transistors (IGFETs) and bipolar junction transistors (BJTs). They are widely used in power electronics for switching and controlling electrical power.

2. Half-Bridge Configuration: The half-bridge configuration consists of two IGBTs connected in series, forming a bridge circuit. One IGBT is responsible for conducting during the positive half-cycle of the input waveform, while the other conducts during the negative half-cycle. This arrangement allows bidirectional control of the current.

3. Voltage and Current Ratings: IGBT half-bridge modules are specified with voltage and current ratings. For example, a common rating might be 1200V/300A, indicating the maximum voltage and current the module can handle.

4. Applications: IGBT half-bridge modules find applications in motor drives, inverters, power supplies, and other systems requiring controlled power switching. They are suitable for applications where variable speed control or power inversion is needed.

5. Cooling and Thermal Management: As with individual IGBTs, IGBT half-bridge modules generate heat during operation. Adequate cooling methods, such as heatsinks or other thermal management systems, are crucial to maintain proper device performance and reliability.

6. Gate Drive Circuitry: Proper gate drive circuitry is essential to control the switching of IGBTs effectively. This includes ensuring that the gate signals are appropriately timed and have sufficient voltage levels.

7. Datasheet: Users should refer to the manufacturer's datasheet for detailed specifications, electrical characteristics, and application guidelines specific to the IGBT half-bridge module they are using.

IGBT half-bridge modules are widely employed in industrial and automotive applications for their capability to handle high power levels and provide efficient and controlled switching of electrical currents.

Circuit diagram headline

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Dimensions in (mm)

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