Jiangsu Solid Power Semiconductor Co.,Ltd
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Solid Power-DS-SPS75B17G3-S04010014 V1.0.
1700V 75A IGBT Half Bridge Module
Features:
Typical Applications:
IGBT, Inverter / IGBT,逆变器
Maximum Rated Values / 最大额定值
|
Item |
Symbol |
Conditions |
Value |
Units | ||
|
集电极－发射极电压 Collector-emitter voltage |
VCES |
Tvj=25°C |
1700 |
V | ||
|
连续集电极直流电流 Continuous DC collector current |
IC nom |
75 |
A | |||
|
集电极重复峰值电流 Peak repetitive collector current |
ICRM |
tp=1ms |
150 |
A | ||
|
总功率损耗 Total power dissipation |
Ptot |
TC=25°C, Tvjmax=175°C |
535 |
W | ||
|
栅极－发射极峰值电压 Maximum gate-emitter voltage |
VGES |
±20 |
V | |||
|
最高结温 Maximum junction temperature |
Tvjmax |
175 |
°C | |||
|
Characteristic Values / 特征值 | ||||||
|
Item |
Symbol |
Conditions |
Min. Typ. Max. |
Units | ||
|
集电极－发射极饱和电压 Collector-emitter saturation voltage |
VCE(sat) |
IC=75,VGE=15V |
Tvj=25°C Tvj=125°C Tvj=150°C |
2.24 2.51 2.56 |
2.60 |
V V V |
|
栅极阈值电压 Gate threshold voltage |
VGE(th) |
IC=3mA, VCE=VGE, Tvj=25°C |
4.5 5.9 6.5 |
V | ||
|
栅极电荷 Gate charge |
QG |
VGE=-15V…+15V |
0.47 |
uC | ||
|
内部栅极电阻 Internal gate resistor |
RGint |
Tvj=25°C |
10.8 |
Ω | ||
|
输入电容 Input capacitance |
Cies |
f=1MHz, Tvj=25°C, VCE=25V, VGE=0V |
5.03 |
nF | ||
|
反向传输电容 Reverse transfer capacitance |
Cres |
f=1MHz, Tvj=25°C, VCE=10V, VGE=0V |
0.18 |
nF | ||
|
集电极-发射极截止电流 Collector-emitter cut-off current |
ICES |
VCE=1700V, VGE=0V, Tvj=25°C |
3.00 |
mA | ||
|
栅极-发射极漏电流 Gate-emitter leakage current |
IGES |
VCE=0V, VGE=20V, Tvj=25°C |
400 |
nA | ||
|
开通延迟时间(电感负载) Turn-on delay time, inductive load |
td( on) |
IC=75A, VCE=900V VGE=±15V RGon=6.6Ω RGoff=6.6Ω
Inductive Load, |
Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C |
174 184
188 |
ns ns ns | |
|
上升时间(电感负载) Rise time, inductive load |
tr |
80 83
81 |
ns ns ns | |||
|
关断延迟时间(电感负载) Turn-off delay time, inductive load |
td(off) |
319 380
401 |
ns ns ns | |||
|
下降时间(电感负载) Fall time, inductive load |
tf |
310 562
596 |
ns ns ns | |||
|
开通损耗能量(每脉冲) Turn-on energy loss per pulse |
Eon |
24.7 27.6 28.4 |
mJ mJ | |||
|
关断损耗能量(每脉冲) Turn-off energy loss per pulse |
Eoff |
10.9 16.1 17.5 |
mJ mJ | |||
|
短路数据 SC data |
ISC |
VGE≤15V, VCC=1000V VCEmax=VCES-LsCE·di/dt, tp=10µs, Tvj=150°C |
240 |
A | ||
|
结－外壳热阻 Thermal resistance, junction to case |
RthJC |
Per IGBT / 每个 IGBT |
0.28 K/W | |||
|
工作温度 Temperature under switching conditions |
Tvjop |
-40 150 °C | ||||
|
Diode, Inverter / 二极管,逆变器 Maximum Rated Values /最大额定值 | ||||||
|
Item |
Symbol |
Conditions |
Value Units | |||
|
反向重复峰值电压 Peak repetitive reverse voltage |
VRRM |
Tvj=25°C |
1700 V | |||
|
连续正向直流电流 Continuous DC forward current |
IF |
75 A | ||||
|
正向重复峰值电流 Peak repetitive forward current |
IFRM |
tp=1ms |
150 A | |||
|
Characteristic Values / 特征值 | ||||||
|
Item |
Symbol |
Conditions |
Min. Typ. Max. Units | |||
|
正向电压 Forward voltage |
VF |
IF=75A |
Tvj=25°C Tvj=125°C Tvj=150°C |
1.59 1.72 1.71 |
2.25 |
V V V |
|
反向恢复峰值电流
Peak reverse recovery current |
IRM |
IF=75A -diF/dtoff=1100A/µs VR =900 V
VGE=-15V |
Tvj=25°C Tvj=125°C Tvj=150°C |
85 101
108 |
A A A | |
|
恢复电荷 Recovery charge |
Qr |
Tvj=25°C Tvj=125°C Tvj=150°C |
23.5 32.9 36.2 |
uC uC uC | ||
|
反向恢复损耗(每脉冲) Reverse recovery energy (per pulse) |
Erec |
Tvj=25°C Tvj=125°C Tvj=150°C |
11.8 17.8 19.6 |
mJ mJ mJ | ||
|
结－外壳热阻 Thermal resistance, junction to case |
RthJC |
Per diode / 每个二极管 |
0.48 K/W | |||
|
工作温度 Temperature under switching conditions |
Tvjop |
-40 150 °C | ||||
Module / 模块
|
Item |
Symbol |
Conditions |
Value |
Unit s |
|
绝缘测试电压 Isolation test voltage |
VISOL |
RMS, f=50Hz, t=1min |
4.0 |
kV |
|
模块基板材料 Material of module baseplate |
Cu | |||
|
内部绝缘 Internal isolation |
基本绝缘 (class 1, IEC 61140) Basic insulation (class 1, IEC 61140) |
Al2O3 | ||
|
爬电距离 Creepage distance |
端子-散热片 / terminal to heatsink 端子-端子/terminal to terminal |
17
20 |
mm | |
|
电气间隙 Clearance |
端子-散热片 / terminal to heatsink 端子-端子/terminal to terminal |
17 9.5 |
mm | |
|
相对电痕指数 Comparative tracking index |
CTI |
>200 |
|
Item |
Symbol |
Conditions |
Min. |
Typ. |
Max. |
Units |
|
杂散电感,模块 Stray inductance module |
LsCE |
30 |
nH | |||
|
模块引脚电阻, 端子-芯片
Module Lead Resistance ,Terminals-Chip |
RCC’+EE’ RAA’+CC’ |
0.65 |
mΩ | |||
|
储存温度
Storage temperature |
Tstg |
-40 |
125 |
°C | ||
|
模块安装的安装扭距 Mounting torque for module mounting |
M |
M6 |
3.00 |
5.00 |
Nm | |
|
端子联接扭距 Terminal connection torque |
M |
M5 |
3.00 |
5.00 |
Nm | |
|
重量
Weight |
G |
160 |
g |
IGBT IGBT
Output characteristic IGBT, Inverter (typical) Output characteristic IGBT, Inverter (typical)
IC=f (VCE) IC=f(VCE)
VGE=15V Tvj=150°C
IGBT IGBT
Transfer characteristic IGBT, Inverter (typical) Switching losses IGBT, Inverter (typical)
IC=f(VGE) E=f(IC)
VCE=20V VGE=±15V, RG=6.6Ω, VCE=900V
IGBT IGBT
Switching losses IGBT, Inverter (typical) Switching losses IGBT, Inverter (typical)
E=f (RG) E=f(IC)
VGE=±15V, IC=75A, VCE=900V VGE=±15V, RG=6.6Ω, VCE=900V
IGBT IGBT
Switching losses IGBT, Inverter (typical) Transient thermal impedance IGBT, Inverter
E=f (RG) ZthJC=f (t)
VGE=±15V, IC=75A, VCE=900V
IGBT,RBSOA
Reverse bias safe operating area IGBT, Inverter (RBSOA) Forward characteristic of Diode, Inverter (typical)
IC=f (VCE) IF=f (VF)
VGE=±15V, RGoff=6.6Ω, Tvj=150°C
Switching losses Diode, Inverter (typical) Switching losses Diode, Inverter (typical)
Erec=f (IF) Erec=f (RG)
RG=6.6 Ω, VCE=900V IF=75A, VCE=900V
Transient thermal impedance Diode, Inverter
ZthJC=f (t)
A "1700V IGBT" is an Insulated Gate Bipolar Transistor capable of handling a maximum voltage of 1700 volts. It is used in applications that require the management of higher voltage levels, such as high-power inverters, motor drives, or power supplies. Proper cooling and gate drive circuitry are essential for optimal performance. Detailed specifications can be found in the manufacturer's datasheet.
Circuit diagram headline
Package outlines