Jiangsu Solid Power Semiconductor Co.,Ltd
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Solid Power-DS-SPS15P12W1M4-S040600003
1200V 15A IGBT PIM Module
1200V 15A IGBT PIM
Features:
□ 1200V Trench+ Field Stop technology
□ Freewheeling diodes with fast and soft reverse recovery
□ VCE(sat) with positive temperature coefficient
□ Low switching losses
□ Short circuit ruggedness
Typical Applications:
□ Servo Drives
□ Converters
□ Inverters
Package
| Item | Symbol | Conditions | Values | Unit | |||
| Isolation test voltage | VISOL | RMS, f = 50 Hz, t =1 min | 2.5 | kV | |||
| Internal isolation | (class 1, IEC 61140) Basic insulation (class 1, IEC 61140) | Al2O3 | |||||
| Creepage distance | dCreep | terminal to heatsink | 11.5 | mm | |||
| dCreep | terminal to terminal | 6.3 | |||||
| Clearance | dClear | terminal to heatsink | 10.0 | mm | |||
| dClear | terminal to terminal | 5.0 | |||||
| Comparative tracking index | CTI | ＞200 | |||||
| Item | Symbol | Conditions | Values | Unit | |||
| Min. | Typ. | Max. | |||||
| Stray inductance module | LsCE | 30 | nH | ||||
| Module lead resistance, terminals - chip | RCC’+EE’ | TC=25℃ | 8.00 | mΩ | |||
| RAA’+CC’ | 6.00 | ||||||
| Storage temperature | Tstg | -40 | 125 | ℃ | |||
| Mounting Force Per Clamp | F | 20 | 50 | N | |||
| Weight | G | 23 | g | ||||
IGBT,/IGBT,Inverter
Maximum Rated Values
| Item | Symbol | Conditions | Values | Unit | |
| Collector-emitter Voltage | VCES | Tvj=25℃ | 1200 | V | |
| Maximum gate-emitter voltage | VGES | ±20 | V | ||
| Transient gate-emitter voltage | VGES | tp≤10μs,D=0.01 | ±30 | V | |
| Continuous DC collector current | IC | TC=25℃ | 20 | A | |
| TC=80℃ | 15 | ||||
| Pulsed collector current,tp limited by Tjmax | ICpulse | 30 | A | ||
| Power dissipation | Ptot | 130 | W | ||
Characteristic Values
| Item | Symbol | Conditions | Values | Unit | |||
| Min. | Typ. | Max. | |||||
| Collector-emitter saturation voltage | VCE(sat) | IC=15A, VGE=15V | Tvj=25℃ | 1.95 | 2.40 | V | |
| Tvj=125℃ | 2.46 | ||||||
| Tvj=150℃ | 2.54 | ||||||
| Gate threshold voltage | VGE(th) | VCE=VGE, IC=0.48mA | 5.1 | 5.7 | 6.3 | V | |
| Collector-emitter cut-off current | ICES | VCE=1200V, VGE=0V | Tvj=25℃ | 100 | µA | ||
| Tvj=150℃ | 5 | mA | |||||
| Gate-emitter leakage current | IGES | VCE=0V,VGE=±20V, Tvj=25℃ | -100 | 100 | nA | ||
| Gate Charge | QG | VCE=600V, IC=15A , VGE=±15V | 0.1 | μC | |||
| Input Capacitance | Cies | VCE=25V, VGE=0V, f =1MHz | 0.9 | nF | |||
| Reverse Transfer Capacitance | Cres | 0.04 | |||||
| Internal gate resistor | RGint | Tvj=25℃ | 0 | Ω | |||
| Turn-on delay time,inductive load | td(on) | VCC=600V,IC=15A RG=40Ω VGE=±15V | Tvj=25℃ | 46 | ns | ||
| Tvj=125℃ | 42 | ns | |||||
| Tvj=150℃ | 44 | ns | |||||
| Rise Time,inductive load | tr | Tvj=25℃ | 38 | ns | |||
| Tvj=125℃ | 41 | ns | |||||
| Tvj=150℃ | 39 | ns | |||||
| Turn-off delay time,inductive load | td(off) | VCC=600V,IC=15A RG=40Ω VGE=±15V | Tvj=25℃ | 215 | ns | ||
| Tvj=125℃ | 249 | ns | |||||
| Tvj=150℃ | 259 | ns | |||||
| Fall time,inductive load | tf | Tvj=25℃ | 196 | ns | |||
| Tvj=125℃ | 221 | ns | |||||
| Tvj=150℃ | 203 | ns | |||||
| Turn-on energy loss per pulse | Eon | VCC=600V,IC=15A RG=40Ω VGE=±15V | Tvj=25℃ | 1.57 | mJ | ||
| Tvj=125℃ | 2.12 | mJ | |||||
| Tvj=150℃ | 2.25 | mJ | |||||
| Turn off Energy loss per pulse | Eoff | Tvj=25℃ | 0.89 | mJ | |||
| Tvj=125℃ | 1.07 | mJ | |||||
| Tvj=150℃ | 1.16 | mJ | |||||
| SC data | ISC | VGE≤15V, VCC=800V | tp≤10µs Tvj=150℃ | 70 | A | ||
| IGBT thermal resistance,junction-case | RthJC | 1.15 | K /W | ||||
| Operating Temperature | TJop | -40 | 150 | ℃ | |||
Diode,Inverter
Maximum Rated Values
| Item | Symbol | Conditions | Values | Unit | |
| Repetitive reverse voltage | VRRM | Tvj=25℃ | 1200 | V | |
| Continuous DC forward current | IF | 15 | A | ||
| Diode pulsed current,tp limited by TJmax | IFpulse | 30 | |||
| I2t-value | I2t | tp=10ms | Tvj=125℃ | 136 | A2s |
Characteristic Values
| Item | Symbol | Conditions | Values | Unit | |||
| Min. | Typ. | Max. | |||||
| Forward voltage | VF | IF=15A , VGE=0V | Tvj=25℃ | 1.60 | 2.10 | V | |
| Tvj=125℃ | 1.75 | ||||||
| Tvj=150℃ | 1.78 | ||||||
| Peak reverse recovery current | IRRM | IF=15A dIF/dt=-250A/μs (Tvj=150°C) VR=600V, VGE=-15V | Tvj=25℃ | 13 | A | ||
| Tvj=125℃ | 15 | ||||||
| Tvj=150℃ | 17 | ||||||
| Reverse recovery charge | QRR | Tvj=25℃ | 1.87 | µC | |||
| Tvj=125℃ | 3.33 | ||||||
| Tvj=150℃ | 3.82 | ||||||
| Reverse recovery energy loss per pulse | Erec | Tvj=25℃ | 0.70 | mJ | |||
| Tvj=125℃ | 1.28 | ||||||
| Tvj=150℃ | 1.45 | ||||||
| Diode thermal resistance,junction-case | RthJCD | 1.90 | K /W | ||||
|
Operating Temperature | TJop | -40 | 150 | ℃ | |||
Diode,Rectifier
Maximum Rated Values
| Item | Symbol | Conditions | Values | Unit | |
| Repetitive reverse voltage | VRRM | Tvj=25℃ | 1600 | V | |
| Maximum RMS forward current per chip | IFRMSM | TC=80℃ | 16 | A | |
| Maximum RMS current at rectifier output | IRMSM | TC=80℃ | 16 | ||
| Surge forward current | IFSM | tp=10ms | Tvj=25℃ | 190 | |
| I²t - value | I2t | tp=10ms | Tvj=25℃ | 181 | A2s |
Characteristic Values
| Item | Symbol | Conditions | Values | Unit | |||
| Min. | Typ. | Max. | |||||
| Forward voltage | VF | IF=15A | Tvj=25℃ | 0.95 | V | ||
| Reverse current | IR | VR=1600V | Tvj=25℃ | 5 | μA | ||
| Diode thermal resistance,junction-case | RthJCD | 1.50 | K /W | ||||
| Operating Temperature | TJop | -40 | 150 | ℃ | |||
IGBT,Brake-Chopper/IGBT
Maximum Rated Values
| Item | Symbol | Conditions | Values | Unit | |
| Collector-emitter Voltage | VCES | Tvj=25℃ | 1200 | V | |
| Maximum gate-emitter voltage | VGES | ±20 | V | ||
| Transient gate-emitter voltage | VGES | tp≤10μs,D=0.01 | ±30 | V | |
| Continuous DC collector current | IC | TC=80℃ | 15 | A | |
| Pulsed collector current,tp limited by Tjmax | ICpulse | 30 | A | ||
| Power dissipation | Ptot | 130 | W | ||
IGBT,Brake-Chopper/IGBT
Characteristic Values
| Item | Symbol | Conditions | Values | Unit | |||
| Min. | Typ. | Max. | |||||
| Collector-emitter saturation voltage | VCE(sat) | IC=15A, VGE=15V | Tvj=25℃ | 2.08 | 2.50 | V | |
| Tvj=125℃ | 2.37 | ||||||
| Tvj=150℃ | 2.45 | ||||||
| Gate threshold voltage | VGE(th) | VCE=VGE, IC=0.48mA | 5.1 | 5.7 | 6.3 | V | |
| Collector-emitter cut-off current | ICES | VCE=1200V, VGE=0V | Tvj=25℃ | 100 | µA | ||
| Tvj=150℃ | 5 | mA | |||||
| Gate-emitter leakage current | IGES | VCE=0V,VGE=±20V, Tvj=25℃ | -100 | 100 | nA | ||
| Gate Charge | QG | VCE=600V, IC=15A , VGE=±15V | 0.1 | μC | |||
| Input Capacitance | Cies | VCE=25V, VGE=0V, f =1MHz | 0.86 | nF | |||
| Reverse Transfer Capacitance | Cres | 0.02 | |||||
| Internal gate resistor | RGint | Tvj=25℃ | 0 | Ω | |||
| Turn-on delay time,inductive load | td(on) | VCC=600V,IC=15A RG=40Ω VGE=±15V | Tvj=25℃ | 51 | ns | ||
| Tvj=125℃ | 47 | ns | |||||
| Tvj=150℃ | 40 | ns | |||||
| Rise Time,inductive load | tr | Tvj=25℃ | 44 | ns | |||
| Tvj=125℃ | 48 | ns | |||||
| Tvj=150℃ | 56 | ns | |||||
| Turn-off delay time,inductive load | td(off) | VCC=600V,IC=15A RG=40Ω VGE=±15V | Tvj=25℃ | 216 | ns | ||
| Tvj=125℃ | 254 | ns | |||||
| Tvj=150℃ | 262 | ns | |||||
| Fall time,inductive load | tf | Tvj=25℃ | 194 | ns | |||
| Tvj=125℃ | 213 | ns | |||||
| Tvj=150℃ | 219 | ns | |||||
| Turn-on energy loss per pulse | Eon | VCC=600V,IC=15A RG=40Ω VGE=±15V | Tvj=25℃ | 0.92 | mJ | ||
| Tvj=125℃ | 1.21 | mJ | |||||
| Tvj=150℃ | 1.31 | mJ | |||||
| Turn off Energy loss per pulse | Eoff | Tvj=25℃ | 0.88 | mJ | |||
| Tvj=125℃ | 1.11 | mJ | |||||
| Tvj=150℃ | 1.15 | mJ | |||||
| IGBT thermal resistance,junction-case | RthJC | 1.15 | K /W | ||||
| Operating Temperature | TJop | -40 | 150 | ℃ | |||
Diode,Brake-Chopper
Maximum Rated Values
| Item | Symbol | Conditions | Values | Unit | |
| Repetitive reverse voltage | VRRM | Tvj=25℃ | 1200 | V | |
| Continuous DC forward current | IF | 8 | A | ||
| Diode pulsed current,tp limited by TJmax | IFpulse | 16 | |||
| I2t-value | I2t | tp=10ms | Tvj=125℃ | 25 | A2s |
Characteristic Values
| Item | Symbol | Conditions | Values | Unit | |||
| Min. | Typ. | Max. | |||||
| Forward voltage | VF | IF=8A , VGE=0V | Tvj=25℃ | 1.88 | 2.40 |
V | |
| Tvj=125℃ | 1.96 | ||||||
| Tvj=150℃ | 1.90 | ||||||
| Peak reverse recovery current | IRRM | IF=8A dIF/dt=-200A/μs (Tvj=150°C) VR=600V, VGE=-15V | Tvj=25℃ | 6 | A | ||
| Tvj=125℃ | 7 | ||||||
| Tvj=150℃ | 8 | ||||||
| Reverse recovery charge | QRR | Tvj=25℃ | 0.68 | µC | |||
| Tvj=125℃ | 1.22 | ||||||
| Tvj=150℃ | 1.32 | ||||||
| Reverse recovery energy loss per pulse | Erec | Tvj=25℃ | 0.27 | mJ | |||
| Tvj=125℃ | 0.49 | ||||||
| Tvj=150℃ | 0.53 | ||||||
|
Diode thermal resistance,junction-case | RthJCD | 1.90 | K/W | ||||
|
Operating Temperature | TJop | -40 | 150 | ℃ | |||
NTC-Thermistor
Characteristic Values
| Item | Symbol | Conditions | Values | Unit | |
| Rated resistance | R25 | TC=25℃ | 5.00 | kΩ | |
| B-value | R25/50 | 3375 | K | ||
IGBT IGBT
Output characteristic IGBT,Inverter(typical) Output characteristic IGBT,Inverter(typical)
IC = f (VCE) IC = f (VCE) Tvj= 150°C
IGBT IGBT
Transfer characteristic IGBT,Inverter(typical) Switching losses IGBT,Inverter (typical)
IC = f (VGE) E = f (RG)
VCE = 20V VGE = ±15V, IC = 15A, VCE = 600V
IGBT IGBT,(RBSOA)
Switching losses IGBT,Inverter( (typical) Reverse bias safe operating area IGBT,Inverter(RBSOA)
E = f (IC) IC =f (VCE)
VGE = ±15V, RG = 40Ω , VCE = 600V VGE = ±15V, RGoff = 40Ω, Tvj = 150°C
IGBT
Transient thermal impedance IGBT,Inverter Forward characteristic of Diode,Inverter (typical)
Zth(j-c) = f (t) IF = f (VF)
Switching losses Diode,Inverter(typical) Switching losses Diode,Inverter(typical)
Erec = f (RG) Erec = f (IF)
IF = 15A, VCE = 600V RG = 40Ω, VCE = 600V
Transient thermal impedance Diode,Inverter Forward characteristic of Diode,Rectifier (typical)
Zth(j-c) = f (t) IF = f (VF)
IGBT
Output characteristic,Brake-Chopper(typical) Forward characteristic of Diode,Brake-Chopper (typical)
IC = f (VCE) IF = f (VF)
NTC-Thermistor-temperature characteristic (typical)
R = f (T)
"IGBT 15A 1200V" refers to an Insulated Gate Bipolar Transistor with a current rating of 15 amperes and a voltage rating of 1200 volts. This type of IGBT is suitable for applications with moderate power requirements, such as household appliances, small motor drives, and low-power inverters. Proper thermal management measures are necessary when using this device, and specific technical specifications and usage guidelines can be found in the manufacturer's datasheet based on the specific application requirements.
Circuit diagram headline
Package outlines
Dimensions in (mm)
mm